Xiao Fan har til forsvar for graden philosophiae doctor (ph.d.) ved Universitetet i Sørøst-Norge, Fakultet for teknologi, naturvitenskap og maritime fag, innlevert avhandling med tittelen «Preparation of novel metal oxides/hydroxides materials and their applications in supercapacitors».
Prøveforelesningen «Gas microsensors: principles, applications and recent trends» starter klokken 10:30 og disputas klokken 12:45 ved campus Vestfold torsdag 8. april.
Av smitternhensyn gjennomføres prøveforelesning og disputas digitalt via Zoom (trykk på lenken som blir aktiv når programmet starter)
Om avhandlingen
Rapid technological development and accelerated natural resource consumption have largely increased the demand for efficient, environmentally-friendly, cost-effective, and safe energy storage devices. Because of unparalleled advantages such as superior power density, strong temperature adaptation, fast charge/discharge rate and ultralong service life, supercapacitors have significantly covered the shortage of conventional physical capacitors and batteries. Pseudocapacitors (PsCs) contribute to higher specific capacitance by reversible faradaic redox reactions and have become the research hotspot in supercapacitors research fields in past decade.
The performances and properties of PsCs are significantly determined by the electrode materials. It was found that Co3O4 and Ni-Co binary hydroxide are two of the promising electrode materials utilized in PsCs. The candidate thus proposed two strategies to optimize the aforementioned materials in order to satisfy the ever-growing demand. As the first strategy, the effort focused on synthesizing materials with desirable morphologies.
Fabrication of Co3O4 with porous hollow spheres/nanoboxes has been explored, as well as fabrication of Ni-Co binary hydroxide with nanosheets encapsulated with nanowires has been investigated. As the second strategy, the candidate developed the technology for loading material in a way to realize the binder-free electrode which reduced the electron transfer impedance.